Influence of Gate-Electrode Fringing Capacitance on Threshold Voltage of Nano-MOSFET

机译：栅电极边缘电容对纳米MOSFET阈值电压的影响

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In this paper, the gate-electrode fringing capacitance of nano-MOSFET is derived by conformal mapping transformation. Threshold voltage including the fringing-capacitance effect is calculated and good agreement with experimental data is obtained. Factors impacting the threshold behaviors of nano-MOSFET are discussed in detail.

机译：本文通过保形映射变换推导了纳米MOSFET的栅电极边缘电容。计算了包括边缘电容效应的阈值电压，并与实验数据吻合良好。详细讨论了影响纳米MOSFET阈值行为的因素。

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《International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN)》|2006年|P.1318-1320|共3页
会议地点 Shanghai(CN)
作者
Feng Ji; Jing-Ping Xu; P. T. Lai; Chun-Xia Li;
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作者单位

Department of Electronic Science Technology, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China;

Department of Electrical Electronic Engineering, the University of Hong Kong, Pokfulam Road, Hong Kong;

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原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词
MOSFET; fringing capacitance; threshold voltage;

机译：MOSFET;边缘电容;阈值电压;

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3. The influence of space quantization effects on the threshold voltage, inversion layer and total gate capacitances in scaled Si-MOSFETs [J] . D.Vasileska, D.K.Ferry Nanotechnology . 1999,第2期

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Influence of Gate-Electrode Fringing Capacitance on Threshold Voltage of Nano-MOSFET

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