LOW-VOLTAGE AND HIGH-SPEED CMOS/SIMOX TECHNOLOGY

摘要

Low-voltage high performance 0.5μm CMOS TFSOI/SIMOX devices and ring oscillators with 1.5V and 3.0V supply voltage have been developed. Both N- and P-MOSFETs have well-behaved characteristics. The propagation delays per stage of a 19-stage CMOS/SIMOX ring oscillator are 840ps and 390ps with 1.5V and 3V supply voltage, respectively. The speed of TF CMOS/SIMOX ring oscillator is much faster than that of CMOS devices fabricated in bulk silicon.