REDUCTION OF SECONDARY DEFECTS AND DIFFUSION OF B ATOMS IN BF_2-IMPLANTED Si(100) BY ION-BEAM DEFECT ENGINEERING

摘要

The effects of ion beam defect engineering (IBDE) in BF_2-impkmted silicon have been studied It has been shown that IBDE technique may be useful in the improvement of the properties of BF_2 implanted silicon. Reduction of secondary defects in BF_2 doped region and the anomalous diffusion of B atoms was observed if a buried amorphous layer was introduced by MeV Si ion irradiation prior to annealing.