Defect influence on the electrical properties of 4H-SIC Schottky diodes

摘要

We report on the defect influence on the electrical properties of 4H-SiC Schottky diodes. The devices were fabricated on a n-type epilayer treated by chemical mechanical polishing. A surface defect map allows to correlate the defect presence to the electrical behavior of the devices. We find that the devices realized on a free defect zone and on micropipes do not show important differences in electrical parameters.