Study of dislocation mobility in 4H SiC by X-Ray transmission topography, chemical etching and transmission electron microscopy

摘要

Dislocations are introduced by bending in a cantilever mode and annealing under compression. They consist of faulted half loops as shown by chemical etching. Their asymmetric propagation in the sample is attested both by etching and XRTT. Based on such a feature, a nucleation and glide mechanism is proposed. The dislocation velocity and the stress exponent are measured at 550℃.