首页> 外文会议>International Conference on Silicon Carbide and Related Materials 2001 Pt.2 Oct 28-Nov 2, 2001 Tsukuba, Japan >Sublimation Growth of Bulk AIN Crystals: Materials Compatibility and Crystal Quality
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Sublimation Growth of Bulk AIN Crystals: Materials Compatibility and Crystal Quality

机译:大块AIN晶体的升华生长:材料相容性和晶体质量

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The main problem to be solved for stable growth of bulk pure A1N is the use of a suitable crucible material. Our analysis of the A1N sublimation growth process support the conclusion made by Slack and McNelly that tungsten is the best choice. However, in the real growth reactor tungsten must be combined with other materials to ensure flexible design and sufficient lifetime of the whole system. Compatibility of tungsten with other high-temperature structural and seed materials such as graphite, A1N and SiC is the topic of the present research.
机译:为了稳定地生长块状纯AlN,要解决的主要问题是使用合适的坩埚材料。我们对AlN升华生长过程的分析支持Slack和McNelly得出的结论,钨是最佳选择。但是,在实际生长反应堆中,钨​​必须与其他材料结合使用,以确保灵活的设计和整个系统的足够使用寿命。钨与其他高温结构和种子材料(例如石墨,AlN和SiC)的相容性是本研究的主题。

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