Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals

摘要

We have developed an UHV-RTCVD system and examined the characteristics of TiN films formed with this system using TiCl_4 and NH_3 as source gases. It was found that TiN films had a polycrystalline texture which consisted of nano-meter scale grains having columnar structures. Smooth surface morphology, with an about 1 nm RMS value, was obtained for deposition temperatures about 550℃. The resistivity of the films was higher for thinner films but was comparable to the ordinary values reported previously when the thickness amounted to about 20 nm. The residual chlorine concentration in the film depends on the deposition temperature and the low chlorine concentration was obtained for 550℃-deposited films, which was less than the detection limit of the AES measurement.