CHEMICAL VAPOR DEPOSITION APPARATUS FOR DEPOSITING DOUBLE LAYERED BARRIER METAL IN SITU AND DEPOSITION METHOD FOR BARRIER METAL USING THE SAME

摘要

The present invention relates to a method for depositing a barrier metal using a chemical vapor deposition apparatus and, a predetermined process the chamber is in progress; The shower head for supplying a reaction gas to the carrier gas for the predetermined process, into the chamber; The shower head and disposed in the chamber to the upper and lower face, wherein the predetermined temperature capable of providing for the process, and the heater driving unit is installed to the stage so as to adjust the shower head and the distance; High-frequency applying unit for applying a high frequency to form a plasma within the chamber; And it characterized in that it comprises the reaction in the gas and the gas supply line for supplying a carrier gas to the reaction gas for the predetermined process in the chamber. With this structure, among the existing gas line gas reaction chamber a Ti (TiCl ₄ ) and Ti deposition without thermal loss by adding a nitrogen line can be directly deposited on the TiN, a motor attached to the stage heater It can be adjusted by the distance between Ti and TiN deposition at the showerhead and the heater stage. Therefore, a chamber can be deposited Ti / TiN barrier metal in-situ in it has the effect of reducing the time and cost of the thermal stress and the process.