首页> 外文会议>International Conference on Processing amp; Manufacturing of Advanced Materials Pt.4; Jul 7-11, 2003; Leganes, Madrid, Spain >The Effect of Grain Boundary Characteristics on Microstructure and Stress Void Evolution in Electroplated and Sputtered Cu Films
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The Effect of Grain Boundary Characteristics on Microstructure and Stress Void Evolution in Electroplated and Sputtered Cu Films

机译:晶界特征对电镀和溅射铜膜微结构和应力空洞演化的影响

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摘要

The evolution of stress-induced damage in copper films during annealing was investigated. Various Cu films were fabricated using sputtering and electroplating with and without additives. After annealing at 435℃, the differences in the morphology of stress-induced surface damage were observed. Some films showed shallow grain boundary wedges along the grain boundaries while in others deep voids at grain boundary triple junction were observed. It was found that the grain size and film thickness as well as fraction of the high energy grain boundaries determines these morphological differences. A model based on relative contribution of the grain boundary and the surface diffusion was suggested.
机译:研究了退火过程中铜膜中应力引起的损伤的演变。使用具有和不具有添加剂的溅射和电镀来制造各种Cu膜。在435℃退火后,观察到应力诱导的表面损伤的形态差异。一些膜显示出沿晶界的浅晶界楔形物,而另一些膜则观察到在晶界三重结处的深空隙。发现晶粒尺寸和膜厚度以及高能晶界的分数决定了这些形态差异。提出了基于晶界和表面扩散的相对贡献的模型。

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