CMP of GaN using sulfate radicals generated by metal catalyst

摘要

A method for preparing atomically smooth gallium nitride (GaN) surface with high material removal rate that involves chemical mechanical polishing with sulfate radical (SO) oxidizer and Fe activator in slurry is presented. The results indicate that complexing agent with Fe activator is the key point to obtain atomically smooth GaN surface and higher removal rate of GaN. Atomic force microscope (AFM) shows that the average surface roughness (Ra) is 0.0601nm.