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Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 ≤ x ≤ 0.3) layer

机译：InxGa1-xAs（0≤x≤0.3）覆盖的自组装In（Ga）As / GaAs量子点的发射波长的修改

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《International Conference on Molecular Beam Epitaxy, 11th, Sep 11-15, 2000, Beijing, China》|2000年|1062-1068|共7页
会议地点 Beijing(CN)
作者
Zhichuan Niu;
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作者单位

Xiaodong Wang, Zhenhua Miao, Songlin Feng;

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原文格式 PDF
正文语种 eng
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专利

1. Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered [J] . Zhichuan Niu, Xiaodong Wang, Zhenhua Miao Journal of Crystal Growth . 2001,第期

机译：自组装In（Ga）As / GaAs量子点发射波长的修饰
2. Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer [J] . H. Y. Liu, M. J. Steer, T. J. Badcock, Applied Physics Letters . 2005,第14期

机译：GaAsSb应变减小层覆盖的InAs / GaAs量子点的长波长发光和发射
3. Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm [J] . K. Shimomura, I. Kamiya Applied Physics Letters . 2015,第8期

机译：用于长波长发射的量子点的应变工程：在GaAs（001）上以超过1.55μm的波长生长的自组装InAs量子点的光致发光
4. Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by In_xGa_(1-x)As(0 [C] . Songlin Feng, Zhenhua Miao, Xiaodong Wang, International conference on molecular beam epitaxy . 2001

机译：由In_XGA_（1-x）覆盖的（Ga）In / GaAs量子点的发射波长的修改为（0
5. II-VI quantum dots: Applications in surface modification and chemical patterning of self-assembled monolayers. [D] . Radhakrishnan, Chander. 2006

机译：II-VI量子点：在自组装单分子层的表面修饰和化学构图中的应用。
6. Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer [O] . Antonio D Utrilla, Jose M Ulloa, Alvaro Guzman, 2014

机译：具有优化的GaAsSbN覆盖层的InAs / GaAs量子点的长波长室温发光
7. Extended wavelength emission to 1.3 μm in nitrided InAs/GaAs self-assembled quantum dots [O] . Kita Takashi, Mori T., Seki H., 2005

机译：氮化的InAs / GaAs自组装量子点中的波长发射扩展到1.3μm
8. Effects of annealing on self-assembled InAs quantum dots and wetting layer inGaAs matrix [R] . Jasinski, J. 2001

机译：退火对Gaas基体中自组装Inas量子点和润湿层的影响

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