Radiation effects of floating-gate (FG) and charge-trapping (CT) Flash memory technologies

摘要

The ⁶⁰Co-γ ray total ionizing dose (TID) radiation responses of 55 nm SONOS (Silicon-Oxide-Nitride-Oxide- Silicon) memory cells and 65 nm FG memory cells are investigated. The threshold voltage (V_th) and off-state leakage current (I_off) of memory cells are measured before and after radiation, respectively. The physical mechanisms of charge loss process are analyzed to explain experiment results.