A New Modeling and Parameter Extraction Technique Uni-Directional High-Voltage MOS Devices

摘要

In this paper, a new method of modeling uni-directional HV MOS device based on the common BSIM3V3 model is presented. We propose to assign physical meanings and values of three model parameters different from the original BSIM3V3 model but not change any equation of it to model the characteristics of uni-directional HV MOS devices. The way of accurately parameters extraction is given later. At last we will show the simulation results using the proposed model, which fit the measured results very well proving the effectiveness of this method.