Infrared Absorption from Low Carbon Concentration, Low Dose, Annealed CZ Silicon

摘要

Complexes formed by low dose irradiation with electron (10~(15-16) /cm~2) and He (5×10~(12)-5×10~(12) /cm~2 ) in the relatively low carbon concentration (10 /cm ) MCZ silicon were investigated by highly sensitive and quantitative IR absorption analysis. C_i_O_i and VO were the main complexes in all cases. The concentration of these complexes was about 10~(15)/cm~3, or 10% of included carbon in the highest case. Loss of almost equal amount of Cs was observed. The concentration of C_iO_iI was one order of magnitude lower. Upon annealing, these lines weakened and almost disappeared at 400 ℃. There were some absorption lines introduced by the annealing. VO_2 was strongest among them and C_sO_i related structure was also confirmed. There were absorption lines at 954.9 and 962.6 cm~(-1) appeared after annealing at 300 ℃.