Modeling of Power GaN HEMT for Switching Circuits Applications Using Levenberg-Marquardt Algorithm

摘要

This paper presents a generic process to characterize and model the power Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). Both static and thermal characteristics of a 650V, 30A GaN HEMT have been modelled using Levenberg-Marquardt Algorithm. The resulted Spice model is then used to converge simulation from experiment characteristics of a designed switching circuit. The accuracy and good convergence of the improved model provide a good way to research the power converters with GaN HEMTs by a simulation approach.