1.5 μm GaInAsP High Mesa Laser Diode on Directly Bonded InP/Si Substrate

摘要

We report the successful fabrication of 1.5 μm GaInAsP high mesa laser diode on the directly bonded InP/Si substrate using MOVPE. A successful lasing operation at room temperature is achieved. We have investigated the lasing characteristics on the silicon substrate from the I-L characteristics, the temperature dependence of threshold current and gain coefficient from the Fabry-Perot oscillation.