Process simulation for feasibility of Double Side Polished: Mosfet and Schottky Diode

摘要

A novel double-side semiconductor structure is reported: MOSFET device and Schottky diode are integrated in a double polished wafers (SchottkMOS on double polished wafers). The article illustrates the simulation work to set up the process in order to realize an integrated structure: Schottky diode with a low voltage MOSFET. The Schottky cathode is connected to the MOSFET's drain; the two structures are made using the two-side wafer 'double side polished' [1]. Double side polished wafers are typically required in semiconductors, MEMS, and other applications where wafers with tightly controlled flatness characteristic are required. These wafers are also needed for double side pattering project: on both side can be appropriately sized epitaxial grown able to develop the MOSFET and Schottky diode. The second part of the paper deals with the spice simulations of synchronous buck converter, the crucial application for this device, showing all the advantages in using SchottkMOS.