首页> 外国专利> Controllable semiconductor diode has series connection that comprises Schottky diode section and MOSFET section, and bridges pn transition and diode has one pn transition that can be switched between first state and second state

Controllable semiconductor diode has series connection that comprises Schottky diode section and MOSFET section, and bridges pn transition and diode has one pn transition that can be switched between first state and second state

机译:可控半导体二极管具有串联连接,包括肖特基二极管部分和MOSFET部分,电桥pn过渡和二极管具有一个pn过渡,可以在第一状态和第二状态之间切换

摘要

A controllable semiconductor diode (1) has at least one pn transition that can be switched between a first state and a second state, the second state having a higher on-state d.c. resistance and lower storage charge than the second state, and a series connection that comprises a Schottky diode section and a MOSFET section, and bridges the pn transition. Independent claims are also included for the following: (A) Electronic component; and (B) Indirect voltage converter.
机译:可控半导体二极管(1)具有至少一个pn跃迁,可以在第一状态和第二状态之间切换,第二状态具有较高的导通状态d.c。电阻和比第二状态更低的存储电荷,以及包括肖特基二极管部分和MOSFET部分并桥接pn过渡的串联连接。还包括以下方面的独立权利要求:(A)电子组件; (B)间接电压转换器。

著录项

  • 公开/公告号DE102005019860A1

    专利类型

  • 公开/公告日2006-11-02

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE20051019860

  • 发明设计人 ECKEL HANS-GUENTER;

    申请日2005-04-28

  • 分类号H01L29/861;H02M7/00;

  • 国家 DE

  • 入库时间 2022-08-21 21:20:19

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