Control of GaAs Microwave Schottky Diode Electrical Characteristics by Contact Geometry: The Gap Diode

摘要

This report presents a new low turn-on Schottky diode, whose I-V characteristics can be controlled by an ohmic gap between Schottky-barrier regions. A survey of barrier-height control techniques and the physics of Schottky-barrier and ohmic contacts is presented. Simple design theories for two types of gap-controlled diodes are discussed. GaAs VPE growth and diode microfabrication procedures are described and results are evaluated. The I-V characteristics, temperature sensitivity, and mixer conversion loss of packaged diodes have been measured. The physical properties and evaluation results of the device are discussed. (Author)