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Electroluminescence Spectra of an STM-Tip-Induced Quantum Dot

机译:STM-Tip诱导量子点的电致发光光谱

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We analyse the electroluminescence measurements performed on a STM-tip-induced quantum dot in a GaAs layer. Positions of electroluminescence peaks, attributed to the electron-hole recombination in the quantum dot, are very sensitive to the electron tunnelling current even in the case when the current is weak and the effect of the electron charge on the electrostatic potential profile in the structure is negligible. We find, in agreement with experiment, that increasing voltage on the STM-tip results in a red shift of the electroluminescence peaks, while the peak positions as a function of the electron tunnelling current reveal a blue shift.
机译:我们分析了在GaAs层中STM尖端诱导的量子点上进行的电致发光测量。归因于量子点中电子-空穴复合的电致发光峰的位置对电子隧穿电流非常敏感,即使在电流微弱且电子电荷对结构中静电势分布的影响为微不足道。我们发现,与实验一致,STM尖端上的电压增加会导致电致发光峰出现红移,而峰位置随电子隧穿电流的变化则显示出蓝移。

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