Spin filtering in asymmetric resonant interband tunneling diodes

摘要

We describe the use of an InAs/GaSb/AlSb-based asymmetric resonantinterband tunneling diode (a-RITD) as a spin filter. The device exploits theRashba effect to achieve spin polarization under zero magnetic field usingnon-magnetic III-V semiconductor heterostructures. We discuss the basicprinciples of the interband tunneling spin filter, and present calculated spin-dependent current densities and current polarization.