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Observation of normally forbidden transition from thefirst to the third conduction subband in GaN/AlGaNquantum wells

机译:观察GaN / AlGaN量子阱中通常禁止从第一导带到第三导带的跃迁

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Normally forbidden intersubband transitions (ISBTs) from thefirst to the third subband e1-e3 have been observed in GaN/Al0.56Ga0.44Nquantum wells (QWs). This demonstrates that a strong built-in field due tothe piezoelectric and spontaneous polarization effects exists in thestructure. The polarization field destroys the symmetry of a square welland induces a strong ISBT e1-e3, which is forbidden in flat-bandsymmetrical QWs. We have also investigated the dependence of the ISBTenergy on the number of QW periods. With increasing the number ofQWs from 10 to 30, the ISBT spectra were found red-shift. This result canbe attributed to the piezoelectric field being reduced due to partial strainrelaxation of the QW layers, seen in asymmetric reciprocal space maps inX-ray diffraction spectra.
机译:通常在GaN / Al0.56Ga0.44N量子阱(QW)中观察到从第一子带e1-e3到第三子带e1-e3的禁止子带间跃迁。这表明由于压电和自发极化效应,结构中存在强大的内置场。极化场破坏了方形阱的对称性,并引发了强烈的ISBT e1-e3,这在平带对称QW中是禁止的。我们还研究了ISBTenergy对QW周期数的依赖性。随着QW的数量从10增加到30,ISBT光谱被发现红移。该结果可以归因于压电场由于QW层的部分应变松弛而减小,这在X射线衍射光谱的不对称倒数空间图中可以看到。

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