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LO-phonon-induced suppression of the Auger relaxation rate of carriers in semiconductor quantum dots

机译:LO声子对半导体量子点中载流子俄歇弛豫速率的抑制

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We have calculated the rate of relaxation of a carrier in a semiconductor quantumdot under the combined effects of its interaction with bulk LO phonons and with a two-dimensional gas of carriers, such as those in the wetting layer associated with growth of InAsself-assembled quantum dots. Effects of screening and state blocking are included withinthe random phase approximation. We find that coupling to the phonons reduces the Augerrelaxation rate by a factor of 10–100 for level separations in the neighbourhood of the LOphonon energy. This suppression of the Auger relaxation mechanism is associated with areduction in the spectral density for excitation of the coupled system. At that energy, relaxationcan be attributed to the finite lifetime of the phonons, which they acquire via their interactionwith the wetting layer carriers.
机译:我们已经计算了半导体量子点中载流子与体LO声子以及二维载流子(例如与InAs自组装量子的生长相关的润湿层中的载气)相互作用共同作用下的弛豫速率。点。筛选和状态阻止的效果包括在随机相位近似中。我们发现,耦合到声子后,对于LOphonon能量附近的能级分离,俄歇放松速率降低了10-100倍。俄歇弛豫机理的这种抑制与耦合系统的激励的频谱密度的减小相关。在该能量下,弛豫可以归因于声子的有限寿命,它们是通过与润湿层载体相互作用而获得的。

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