首页> 外文会议>International conference on the physics of semiconductors;ICPS >Ultrafast Carrier Drift and Field Screening in a Biased GaAs/AlGaAs QuantumWell Infrared Photodetector
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Ultrafast Carrier Drift and Field Screening in a Biased GaAs/AlGaAs QuantumWell Infrared Photodetector

机译:偏置GaAs / AlGaAs QuantumWell红外光电探测器中的超快载流子漂移和场筛选

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We present time and spectral resolved pump and probe studies of theintersubband dynamics in a bound to quasi-bound GaAs/AlGaAs quantum wellinfrared photodetector (QWIP) dependent on the external electric field. With appliedelectrical field 35%-45% of the excited electrons escape to continuum states and areaccelerated along the electrical field. Within time constants between 5 ps and 9 psthese electrons are recaptured by wells in the low field bulk domain. The redistributionof the carriers in the picosecond time regime and the screening of the external fielddue to the separation between electrons and donors lead to a change of the absorptionspectrum for a time period shorter than the intrinsic response time of the electricalcircuit.
机译:我们提出时间和频谱分辨泵浦和探针研究依赖于外部电场的绑定到准绑定的GaAs / AlGaAs量子阱红外光电探测器(QWIP)中的子带间动力学。在施加电场的情况下,35%-45%的激发电子逃逸到连续态,并沿电场加速。在5 ps和9 ps之间的时间常数内,这些电子被低场体域中的阱所捕获。由于电子与施主之间的分离,载流子在皮秒时间范围内的重新分布以及对外部电场的屏蔽会导致吸收光谱的变化时间短于电路的固有响应时间。

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