Interface effects on the in-plane anisotropy in(InGaAs)/InP and (InAlAs)/InP Superlattices

摘要

In this paper we study the electronic and optical properties of(Ga0.5In0.5As)n/(InP)n and (Al0.5In0.5As)n/(InP)n superlattices using twodifferent ab-initio self-consistent approaches: norm-conservingpseudopotentials and LMTO-ASA. The aim is to relate the optical inplaneanisotropy found in these systems to the characteristics of theinterface atomic configuration and superlattice symmetry