Role of doped layers in phase relaxation of carriers inquantum well

摘要

The temperature and gate voltage dependences of the phase breaking time arestudied experimentally in GaAs/InGaAs heterostructures with a single quantum well. It isshown that appearance of states at the Fermi energy in the doped layers leads to a significantdecrease of the phase breaking time of the carriers in the quantum well and to saturation of thephase breaking time at low temperature.