Role of Electron-Electron Scattering on the Ultrafast Relaxation of Hot Photoexcited Carriers in GaAs.

摘要

The femtosecond relaxation of photoexcited carriers in semiconductors is investigated by the use of ensemble Monte Carlo calculations coupled with a molecular dynamics approach for the carrier-carrier interaction, to probe various scattering mechanisms and the dynamic screening of hot carriers in semiconductors. The results indicate that the initial rapid relaxation occurs on a time scale of tens of femtoseconds in GaAs, decreasing with increasing carrier density. Reprints. (rrh)