High-temperature properties of Schottky diodes made of silicon carbide

摘要

This paper refers to properties of silicon carbide Schottky diodes at high values of their internal temperature. The investigated diode was elaborated at Warsaw University of Technology. Characteristics of this diode were measured at different cooling conditions in wide range of dissipated power. At each operating point the value of the internal temperature of the investigated diode was measured with the use of the impulse electrical method. On the basis of the obtained results of measurements thermal properties of the considered diode were discussed, as well as the possibility of using such a construction of the diode at very high values of its internal temperature (up to 500μC) was considered.