Wafer Fusion of GaSb to GaAs

摘要

Atomic wafer fusion of GaSb to GaAs, and the transfer of epitaxial GaSb/GaInAsSb/GaSb heterostructures to GaAs by fusion and substrate removal are demonstrated for the first time. Wafers and epilayers were fused with or without application of mechanical pressure at temperatures as low as 350 ℃. A periodic pattern of grooves etched into the GaAs wafer and an overpressure of As and Sb vapor were used to improve covalent bonding. Varying degrees of mass transport and covalent bond formation between wafers were observed in cleaved cross-sections under high-resolution scanning electron microscopy. Epilayers fused without pressure application exhibited significantly better structural and optical properties compared to those fused with pressure.