Experimental Analysis of Silicon Oxycarbide Thin Films and Waveguides

摘要

Silicon oxycarbide (SiOC) thin films are produced with reactive rf magnetron sputtering of a silicon carbide (SiC) target on Si (100) and SiO_2/Si substrates under varying deposition conditions. The optical properties of the deposited SiOC thin films are characterized with spectroscopic ellispometry at multiple angles of incidence over a wavelength range 300-1600 run. The derived optical constants of the SiOC films are modeled with Tauc-Lorentz model. The refractive index n of the SiOC films range from 1.45 to 1.85 @ 1550 nm and the extinction coefficient k is estimated to be less than 10~(-4) in the near-infrared region above 1000 nm. The topography of SiOC films is studied with SEM and AFM giving rms roughness of 0.9 nm. Channel waveguides with a SiOC core with a refractive index of 1.7 have been fabricated to demonstrate the potential of sputtered SiOC for integrated photonics applications. Propagation loss as low as 0.39 ± 0.05 dB/mm for TE and 0.41 ± 0.05 dB/mm for TM polarizations at telecommunication wavelength 1550 nm is demonstrated.