FORMATION OF SILICON OXYCARBIDE THIN FILMS

摘要

PROBLEM TO BE SOLVED: To provide a method for depositing a silicon oxycarbide (SiOC) thin film on a substrate in a reaction space.SOLUTION: A method for depositing a silicon oxycarbide thin film on a substrate comprises a plasma enhanced atomic layer deposition (PEALD) cycle including at least one step for alternately and sequentially contacting the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that does not include oxygen. In the method, a ratio of a wet etch rate of the SiOC thin film to a wet etch rate of thermal silicon oxide is less than about 5. Thus, a SiOC film improved in acid resistance and wet etchability can be deposited.SELECTED DRAWING: Figure 1