XPS Analysis of Silicon Oxycarbide Formed on the Surface of Rf-sputter Deposited SiC Thin Films

摘要

Sputter deposited SiC films with and without annealing were characterized using X-ray photoelectron spectroscopy (XPS). A complex transition layer, containing silicon oxycarbide (SiC_xO_y), between the SiO_2 layer grown during extended exposure to ambient air or annealing and SiC substrate was investigated. Furthermore, the presence of excessive amorphous carbon was detected in the near-surface region for annealed sample. We justified the differences of composition and chemical bonding in these two oxide layers in terms of different oxidation kinetics involved.