Investigating the passivation of mercury cadmium tellu ride by atomic layer deposition of aluminum oxide

摘要

High aspect ratio features in mercury cadmium telluride (MCT) for advanced IR sensor technologies present a challenge to deposition of electrical passivation materials. Deposition of aluminum oxide (Al_2O_3) onto MCT near room temperature by plasma assisted atomic layer deposition was studied. Conformal deposition was studied through SEM images of thick (ca. 150 run) deposition onto high aspect ratio features dry etched into MCT. Minority carrier lifetime was measured by photoconductive decay transients of MCT before and after deposition, and the lifetimes compared.