首页>
外国专利>
Methods for atomic-layer deposition of aluminum oxides in integrated circuits
Methods for atomic-layer deposition of aluminum oxides in integrated circuits
展开▼
机译:集成电路中氧化铝原子层沉积的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present inventors devised unique atomic-layer deposition systems, methods, and apparatus suitable for aluminum-oxide deposition. One exemplary method entails providing an outer chamber enclosing a substrate, forming an inner chamber within the outer chamber, and introducing an oxidant into the inner chamber, and introducing an aluminum precursor into the inner chamber. The inner chamber has a smaller volume than the outer chamber, which ultimately requires less time to fill and purge and thus promises to reduce cycle times for deposition of materials, such as aluminum oxide.
展开▼