A novel trench concept for the fabrication of compensation devices

摘要

In this paper we propose a novel trench based concept for compensation devices. Our approach includes the conformal deposition of two epitaxial layers in the trench. We present simulation results indicating an improvement in Rdson*A by more than 50 % versus 600V CoolMOS as today's benchmark in compensation devices. Furthermore we demonstrate the successful implementation of the necessary single processes such as deep trench etch (aspect ratio 12:1) and conformal defect free epitaxy.