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Investigation of Advanced Via Plating Process for Via Interconnection Enhancement

机译:用于增强通孔互连性的高级通孔电镀工艺的研究

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摘要

Recently,requirements for packaging substrate are greatly increasing in the electronics industry. In these requirements,it is very important to enhance via interconnection for reliability enhancement of packaging substrate because via interconnection is directly concerned with electrical characteristic of packaging substrate. And the incorrect via interconnection is very often happened to packaging substrate manufacturing process. As the size of micro via hole makes smaller,electroless copper is insufficiently plated in via hole inside. Because of this insufficient plating in smaller micro via hole,it would be happened to the incorrect via interconnection and reliability problem. rnTo resolve this reliability problem and to enhance reliability of packaging substrate,advanced via plating process on micro via hole is executed by controlling of catalyst type and plating time. In this study,it is investigated to the relationship between copper plating using this plating process and electrical resistance of via interconnection. Reliability of via interconnection is evaluated with thermal shock test in liquid phase. And it is analyzed to the effect of advanced via plating in via fill plating. rnAs the results,it is confirmed that reliability of via interconnection is enhanced by executing advanced via plating process with plating condition of catalyst B type and plating time Ⅱ. As copper plating thickness plated with this plating process on via bottom domain is thicker,electrical resistance of via interconnection is lower and reliability of packaging substrate is enhanced. Also it is observed that micro via hole is stably plated with copper on via bottom domain using advanced via plating process. In thermal shock test,it is confirmed that reliability of via interconnection using advanced via plating process is satisfied with a less than 10% relative change in electrical resistance,until 1000 thermal cycle. In addition,it is found to the mechanism of advanced via plating process for enhancement of via interconnection. In conclusion,for the purpose of reliability enhancement of micro via interconnection,the optimum advanced via plating process is established by using catalyst B type and plating timeⅡ. Advanced via plating process is proposed to enhance conventional semi-additive plating process,in terms of reliability of packaging substrate.
机译:近来,在电子工业中对封装基板的需求大大增加。在这些要求中,增强通孔互连对于提高包装基板的可靠性非常重要,因为通孔互连与包装基板的电特性直接相关。并且不正确的通孔互连经常发生在封装基板的制造过程中。随着微通孔的尺寸变小,化学铜在内部的通孔中镀覆不足。由于在较小的微通孔中镀层不足,会发生不正确的通孔互连和可靠性问题。为了解决该可靠性问题并提高封装基板的可靠性,通过控制催化剂的种类和电镀时间,对微通孔进行先进的电镀工艺。在这项研究中,研究了使用该电镀工艺的铜电镀与通孔互连电阻之间的关系。通过液相热冲击试验评估通孔互连的可靠性。并分析了通孔填充电镀中高级通孔电镀的效果。 rn结果证实,通过在催化剂B型的镀敷条件和镀敷时间Ⅱ下进行先进的过孔镀敷工艺,可以提高通孔互连的可靠性。由于通过该电镀工艺在通孔底部区域上电镀的铜电镀厚度较厚,所以通孔互连的电阻较低,并且提高了封装基板的可靠性。还观察到,使用先进的通孔电镀工艺,微通孔在通孔底部区域上被铜稳定地电镀。在热冲击测试中,可以确认,使用先进的通孔电镀工艺可以实现通孔互连的可靠性,直到1000次热循环,电阻的相对变化均小于10%。另外,发现了先进的通孔电镀工艺的机制以增强通孔互连。综上所述,以提高微孔互连的可靠性为目的,利用催化剂B型和电镀时间Ⅱ,确定了最佳的先进电镀工艺。在封装基板的可靠性方面,提出了先进的通孔电镀工艺以增强常规的半添加电镀工艺。

著录项

  • 来源
  • 会议地点 San Jose CA(US)
  • 作者单位

    Samsung Electro-Mechanics Co., LTD.#314, Maetan-3-dong, Yeongtong-gu, Suwon City, Gyeonggi Province, 442-743, Korea Phone: +82-31-218-2709, e-mail: jh3025.park@samsung.com;

    Samsung Electro-Mechanics Co., LTD.#314, Maetan-3-dong, Yeongtong-gu, Suwon City, Gyeonggi Province, 442-743, Korea Phone: +82-31-218-2709;

    Samsung Electro-Mechanics Co., LTD.#314, Maetan-3-dong, Yeongtong-gu, Suwon City, Gyeonggi Province, 442-743, Korea Phone: +82-31-218-2709;

    Samsung Electro-Mechanics Co., LTD.#314, Maetan-3-dong, Yeongtong-gu, Suwon City, Gyeonggi Province, 442-743, Korea Phone: +82-31-218-2709;

    Samsung Electro-Mechanics Co., LTD.#314, Maetan-3-dong, Yeongtong-gu, Suwon City, Gyeonggi Province, 442-743, Korea Phone: +82-31-218-2709;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 微电子学、集成电路(IC);
  • 关键词

    packaging substrate; reliability; via interconnection; catalyst; via plating;

    机译:包装基材可靠性;通过互连;催化剂;通过电镀;

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