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Contactless Conductivity Measurement for ITO Nanolayers on AsGa Substrats Over a Wide Frequency Range

机译:宽频率范围内AsGa基板上ITO纳米层的非接触电导率测量

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We report on the application of a new contactless method based on eddy currents with a view to characterizing some transport properties of a large range of semiconductors. The innovative approach of this work consists in measuring the impedance of the coil by reflectometry using a broadband multicarrier test signal. The device works well with silicon wafers with a constant conductivity over a wide frequency range. Because of their electrical conductivity and high optical transmittance in the visible and near-IR regions of electromagnetic spectrum, indium tin oxide (ITO) films have motivated great interests in experimental studies and technological applications. The estimation of their electrical conductivity is a key point to develop these devices. On this paper we show that the setup can be used for the frequency characterization of ITO and AsGa nanolayers wich exhibit a frequency dependent behavior. The low frequency measurement are found in agreement with the classical four point probe setup.
机译:我们报告了基于涡流的一种新的非接触方法的应用,目的是表征大范围半导体的某些传输特性。这项工作的创新方法包括使用宽带多载波测试信号通过反射法测量线圈的阻抗。该器件可在宽频率范围内与具有恒定电导率的硅晶片良好配合。由于其在电磁光谱的可见光和近红外区域中的导电性和高透光率,氧化铟锡(ITO)膜引起了实验研究和技术应用的极大兴趣。估算其电导率是开发这些器件的关键点。在本文上,我们表明该装置可用于ITO的频率表征,并且AsGa纳米层具有一定的频率依赖性。低频测量与经典的四点探头设置一致。

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