Performance of 18-kV Silicon Carbide High-Voltage Boost-Chopper Modules

摘要

This work presents preliminary measurements of recently-fabricated, state-of-the-art SiC Insulated-Gate Bipolar Transistors (IGBTs) and Junction Barrier Schottky (JBS) diodes co-packaged in a high-performance module. The IGBT devices have an active area of 0.3 cm