Leakage Current Degradation in SiC Junction Barrier Schottky Diodes under Heavy Ion Microbeam

摘要

Leakage current degradation of SiC junction barrier Schottky diodes were studied under heavy ion microbeam. Leakage current increased linearly with fluence and was positively related to bias voltage. It was proposed that leakage current occurred as a result of the accumulation of multiple leakage paths. The explanation that the increased leakage current was related to leakage paths formed by damage in the mechanism of 'micro-SEB' was verified.