Investigations on the Short-Circuit Degradation and its Mechanism of 1.2-KV 19-A SiC power MOSFETs

机译：1.2 KV 19-A SiC功率MOSFET的短路降解及其机理研究。

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To provide a guideline for converter design and fault protection, the failure mechanism and reliability of silicon carbide (SiC) power MOSFETs needs to be further investigated. In this paper, the failure mechanism during short-circuit (SC) of commercial 1.2-KV/19-A SiC power MOSFETs was investigated. After the SC tests, the I

机译：为了为转换器设计和故障保护提供指导，需要进一步研究碳化硅（SiC）功率MOSFET的故障机理和可靠性。本文研究了商用1.2-KV / 19-A SiC功率MOSFET的短路故障机理。经过SC测试后，

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来源
《IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits》|2019年|1-4|共4页
会议地点 Hangzhou(CN)
作者
J. L. Wang; Y. Q. Chen; Z. Y. He; Y. F. En; X. B. Xu; Y. Huang; K. W. Geng;
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作者单位

South China University of Technology Guangzhou School of Electronic and Information Engineering Guangdong China 510000;

Institute of the Ministry of Industry and Information Technology Guangzhou Science and Technology on Reliability Physics and Applicatio;

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关键词
power MOSFET; semiconductor device testing; silicon compounds; wide band gap semiconductors;

机译：功率MOSFET;半导体器件测试；硅化合物;宽带隙半导体;

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专利

1. Determination of failure degree of 1.2 kV SiC MOSFETs after short-circuit test using an improved test setup [J] . Shen Diao, Jun Sun, Ziwei Zhou, 纳米技术与精密工程（英文） . 2020,第004期
2. Investigations on the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Short-Circuit Tests [J] . Xintian Zhou, Hongyuan Su, Yan Wang, Electron Devices, IEEE Transactions on . 2016,第11期

机译：重复短路测试下1.2 kV 4H-SiC MOSFET的退化研究
3. Investigating the Failure Mechanism of Short-Circuit Tests in 1.2-kV SiC JBS-Integrated MOSFETs [J] . Zhang Yourun, Yang Xiao, Chen Hang, IEEE Transactions on Electron Devices . 2020,第10期

机译：在1.2-kV SiC JBS集成MOSFET中调查短路测试的失效机制
4. Implications of short-circuit events on power cycling of 1.2-kV/20-A SiC MOSFET power modules [J] . Du H., Ceccarelli L., Iannuzzo F., Microelectronics & Reliability . 2019,第Sepa期

机译：短路事件对1.2kV / 20A SiC MOSFET电源模块的功率循环的影响
5. Investigations on the Short-Circuit Degradation and its Mechanism of 1.2-KV 19-A SiC power MOSFETs [C] . J. L. Wang, Y. Q. Chen, Z. Y. He, IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits . 2019

机译：1.2-KV 19-A SIC电源MOSFET的短路降解及其机理的研究
6. A Wide-Range Input Auxiliary Power Supply Based on Series-Connected SiC MOSFETs for Modular Multi-Level Converter [D] . Saeed, Muhammad A. 2020

机译：基于串联的SIC MOSFET的宽范围输入辅助电源用于模块化多级转换器
7. Radiation Response of Negative Gate Biased SiC MOSFETs [O] . Akinori Takeyama, Takahiro Makino, Shuichi Okubo, 2019

机译：负栅偏置SiC MOSFET的辐射响应
8. Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage [O] . Masaki Namai, Junjie An, Hiroshi Yano, 2018

机译：不同直流母线电压调查SiC MOSFET的短路故障机制

Investigations on the Short-Circuit Degradation and its Mechanism of 1.2-KV 19-A SiC power MOSFETs

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