The Dielectric Properties and Radiation Resistance of Aluminum Oxide Layers Obtained by Atomic Layer Deposition

摘要

dielectric layers obtained by ALD method have been studied. The breakdown field strength of these structures has been determined to be about 4.4 MV/cm in the linear voltage increase mode and to have virtually no dependence on the voltage increase rate. The type of the frequency dependence of permittivity and dielectric loss of these structures has been established in the frequency range of 25 Hz - 1 MHz. Dielectric loss has been shown to increase upon sample exposure to gamma-quanta of caesium-137 proportionally to exposure time.