SEMICONDUCTING LAYER FOR NUCLEAR POWER HIGH VOLTAGE CABLE, SEMICONDUCTING LAYER SHEET FOR THE ATOMIC POWER HIGH TENSION CABLE, ATOMIC POWER HIGH TENSION CABLE INCLUDING THE SAME AND A MANUFACTURING METHOD THEREOF CAPABLE OF IMPROVING RADIATION RESISTANCE AND OXIDATION RESISTANCE

摘要

PURPOSE: A semiconducting layer for nuclear power high voltage cable, semiconducting layer sheet for the atomic power high tension cable, atomic power high tension cable including the same and a manufacturing method thereof are provided to remarkably reduce failure possibility of the atomic power high tension cable.;CONSTITUTION: A semiconducting layer for nuclear power high voltage cable comprises a base matrix resin which embodies as ethylene vinyl acetate and additive which is added to the ethylene vinyl acetate. A manufacturing method of the semiconducting layer sheet comprises the following steps: mixing ethylene vinyl acetate solution which dissolves the ethylene vinyl acetate in the cyclohexane with the carbon nanotube solution which dispersed the carbon nanotube into the cyclohexane; removing and drying solvent of the precipitate which is formed by solidifying the mixture using the ethanol(540); and manufacturing by milling and compression-molding the dried precipitate(560).;COPYRIGHT KIPO 2012