Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness

机译：双栅极铟镓镓锌氧化物薄膜晶体管中的动态阈值电压调制：有源层厚度的影响

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) operation for double-gate (DG) amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that with 80 nm a-IGZO layer, by adjusting top gate (TG) biases from negative to positive, the bottom gate (BG)-sweep TFTs show V

机译：）双栅极（DG）非晶铟镓锌氧化物（a-IGZO）薄膜晶体管（TFT）的操作。发现在80 nm的a-IGZO层中，通过将顶栅（TG）的偏压从负调整为正，底栅（BG）扫描的TFT显示出V

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《IEEE International Conference on Electron Devices and Solid State Circuits》|2018年|1-2|共2页
会议地点 Shenzhen(CN)
作者
Yang Shao; Hongjuan Lu; Xiaoliang Zhou; Letao Zhang; Xiaodong Zhang; Shengdong Zhang;
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作者单位

School of Electronic and Computer Engineering Shenzhen Graduate School Peking University Shenzhen PRC 518055;

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Thin film transistors; Logic gates; Fitting; Modulation; Dielectrics; Threshold voltage;

机译：薄膜晶体管；逻辑门配件;调制;电介质；门槛电压;

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专利

1. The Voltage-based Modulation Technique Using Potassium Superoxide for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors [J] . Heesoo Lee, Tae Soo Jung, Jeong Woo Park, SID International Symposium: Digest of Technology Papers . 2019,第3期

机译：基于基于电压的调制技术，其使用超氧化钾用于非晶铟 - 镓 - 氧化锌薄膜晶体管
2. Active-layer Thickness Effects Related to the Threshold Voltage and Mobility Degradation in Poly-crystalline ZnO Thin-Film Transistors [J] . Jeong KS, Kim YM, Park JG, Journal of the Korean Physical Society . 2011,第5aPta1期

机译：与多晶ZnO薄膜晶体管的阈值电压和迁移率降低相关的有源层厚度效应
3. Two-stage unified stretched-exponential model for time-dependence of threshold voltage shift under positive-bias-stresses in amorphous indium-gallium-zinc oxide thin-film transistors [J] . Jeong Chan-Yong, Kim Hee-Joong, Hong Sae-Young, Japanese journal of applied physics . 2017,第8期

机译：非晶态铟镓锌氧化物薄膜晶体管中正偏压下阈值电压漂移的时效两阶段统一拉伸指数模型
4. Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness [C] . Yang Shao, Hongjuan Lu, Xiaoliang Zhou, IEEE International Conference on Electron Devices and Solid-State Circuits . 2018

机译：双栅极铟 - 镓 - 氧化锌薄膜晶体管中的动态阈值电压调制：有源层厚度的影响
5. Indium-Gallium-Zinc Oxide Thin-Film Transistors for Active-Matrix Flat-Panel Displays. [D] . Mahmoudabadi, Forough. 2017

机译：用于有源矩阵平板显示器的铟镓锌氧化物薄膜晶体管。
6. Tuning the Threshold Voltage in Organic Thin-Film Transistors by Local Channel Doping Using Photoreactive Interfacial Layers [O] . Marco Marchl, Matthias Edler, Anja Haase, -1

机译：使用光反应性界面层通过局部沟道掺杂来调节有机薄膜晶体管的阈值电压
7. Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium–Gallium–Tin Oxide Thin-Film Transistors [O] . Dae-Hwan Kim, Hyun-Seok Cha, Hwan-Seok Jeong, 2021

机译：有源层厚度对高迁移率非晶铟 - 镓 - 氧化钛薄膜晶体管的电特性及稳定性的影响

Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness

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