OPERATOR LEVEL SOFTWARE OF THE SILICON SINGLE CRYSTAL FURNACE

机译：硅单晶炉操作员级软件

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摘要

Functional assignment, composition and main design principles of the operator level software of automated furnace for growing Silicon single crystals are presented.

机译：介绍了用于生长硅单晶的自动炉操作员级软件的功能分配，组成和主要设计原理。

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《IASTED(International Association of Science and Technology for Development) International Multi-Conference on Automation, Control, and Information Technology: Automation, Control, and Applications; 20050620-24; Novosibirsk(RU)》|2005年|P.126-128|共3页
会议地点 Novosibirsk(RU)
作者
Bevzov A.N.; Kurochkin A.V.; Okunishnikov S.V.;
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作者单位

Institute of Automation and Electrometry of Siberian Branch of Russian Academy of Sciences 1 Prospekt Akademika Koptyuga, Novosibirsk-90, 630090 RUSSIA;

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会议组织
原文格式 PDF
正文语种 eng
中图分类自动化系统理论;
关键词
software; automation; GUI; silicon;

机译：软件;自动化; GUI;硅;

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专利

1. The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski silicon single crystals grown in a transverse magnetic field [J] . Norihisa Machida, Keigo Hoshikawa, Yasuo Shimizu Journal of Crystal Growth . 2000,第4期

机译：氩气流量和炉压对横向磁场中生长的切克劳斯基单晶硅中氧浓度的影响
2. Structural and electrical properties of furnace and rapid thermally annealed LPCVD WSi/sub 2/ films on single-crystal, polycrystalline, and amorphous silicon substrates [J] . Shenai K. IEEE Transactions on Electron Devices . 1992,第1期

机译：在单晶，多晶硅和非晶硅衬底上的熔炉和快速热退火LPCVD WSi / sub 2 /膜的结构和电性能
3. The Effect of the Doping Level of Starting Silicon Single Crystals on Structural Parameters of Porous Silicon Produced by Electrochemical Etching [J] . Zegrya A. G., Sokolov V. V., Zegrya G. G., Technical physics letters: Letters to the Russian journal of applied physics . 2019,第11期

机译：起始硅单晶掺杂水平对电化学蚀刻产生多孔硅结构参数的影响
4. OPERATOR LEVEL SOFTWARE OF THE SILICON SINGLE CRYSTAL FURNACE [C] . Bevzov A. N., Kurochkin A. V., Okunishnikov S. V. IASTED International Multi-Conference on Automation, Control, and Information Technology . 2005

机译：硅单晶炉的操作员级软件
5. Structural, magnetothermal, and magnetotransport properties of single crystal terbium silicon germanide and spontaneous generation of voltage in single crystal gadolinium silicon germanide and gadolinium. [D] . Zou, Min. 2009

机译：单晶锗硅化锗和的结构，磁热和磁传输特性以及自发产生的电压。
6. Crystal orientation-dependent fatigue characteristics in micrometer-sized single-crystal silicon [O] . Tsuyoshi Ikehara, Toshiyuki Tsuchiya 2016

机译：微米级单晶硅中取决于晶体取向的疲劳特性
7. The New Software for Research and the Modelling of Grown-in Microdefects in Dislocation-Free Silicon Single Crystals [O] . Vitalyi Igorevich Talanin 2018

机译：用于无错硅单晶的研究新软件和成长微碎片的建模
8. Evaluation of the Mellen ''EDG'' Furnace for Growth of Large Diameter GaAs Single Crystals in a Horizontal Configuration [R] . Bourret, E. D. , Guitron, J. B. , Haller, E. E. 1987

机译：用于水平配置的大直径Gaas单晶生长的mellen''EDG''炉的评价

OPERATOR LEVEL SOFTWARE OF THE SILICON SINGLE CRYSTAL FURNACE

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