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Study of dielectric strength of polycrystalline CVD diamond films for thermalmanagement in power electronic

机译:电力电子热管理用多晶CVD金刚石薄膜的介电强度研究

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In this paper we present ourrninvestigation on dielectric strength for diamond filmsrnwith thickness ranging from 100 μm to 200 μm.rnIndustrials CVD diamond films, type 2a naturalrndiamond and home made CVD diamond set samplesrnare compared. Dielectric strength from 30 kV/mm torn120 kV/mm are measured on CVD diamond using thernbreakdown voltage measurement in AC and DC.rnThese values are lower than the ones expected forrnnatural diamond but they are still higher than otherrnsubstrate materials like Al2O3, AlN or SiC.rnThe dependence of dielectric strength on the phasernpurity and nitrogen contents has been investigated.rnThese parameters have been estimated by Ramanrnspectroscopy.rnThermal conductivity, thermo-mechanicalrnproperties are also discussed to prove the goodrnaptitude of polycrystalline CVD diamond for highrnvoltage high power electronic heat sinks applications.
机译:在本文中,我们对厚度为100μm至200μm的金刚石膜的介电强度进行了研究。比较了工业CVD金刚石膜,2a型天然金刚石和自制CVD金刚石镶套样品。使用交流和直流中的击穿电压测量值在CVD金刚石上测量了30 kV / mm至120 kV / mm的介电强度。这些值虽然低于预期的天然金刚石,但仍高于其他基材材料,如Al2O3,AlN或SiC。研究了介电强度对相纯度和氮含量的依赖关系。通过拉曼光谱法估算了这些参数。讨论了导热率,热机械性能,以证明多晶CVD金刚石在高电压大功率电子散热器应用中的良好性能。

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  • 来源
  • 会议地点 Delft(NL);Delft(NL)
  • 作者单位

    L.E.E.I (Laboratoire d'Electrotechnique et d'Electronique Industrielle), 2, rue Camichel,B.P. 7122, 31071 Toulouse Cedex 7, France;

    L.G.E.T. (Laboratoire de Génie Electrique de Toulouse), CNRS, Université Paul Sabatier,31062 Toulouse Cedex, France;

    L.I.M.H.P (Laboratoire d’Ingénierie des Matériaux et des Hautes Pressions), Université Paris-Nord,rn93430 Villetaneuse, France;

    L.I.M.H.P (Laboratoire d’Ingénierie des Matériaux et des Hautes Pressions), Université Paris-Nord,rn93430 Villetaneuse, France;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 输配电工程、电力网及电力系统;
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