Pockels effect and optical rectification induced by the built-in electric field in the space charge regions of surface layers of silicon crystals

摘要

In this paper, electric field induced Pockels effect and optical rectification were demonstrated in the space charge regions of surface layers of (001)- and (HO)-cut silicon crystals. The Pockels signals were much larger than the Kerr signals. These effects were considerable that they should be taken into account when designing silicon devices. Dependence of the optical rectification on various depth of the silicon crystal was investigated which could be used as a simple and nondestructive method to detect distribution of electric field of silicon devices.