Ti/Pt/Au AND WSiN/Ti/Pt/Au SCHOTTKY CONTACTS TO N-TYPE InGaP EPITAXIAL LAYERS

机译：Ti / Pt / Au和WSiN / Ti / Pt / Au肖特基接触N型InGaP外延层

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Experiments showed that provided a proper contact technology is applied, good Schottky diodes can be obtained both for the Ti/Pt/Au and WSiN/Ti /Pt/Au metallizations. However, while the WSiN/Ti/Pt/Au contacts are stable up to 550℃, the Ti/Pt/Au contacts lose their Schottky character at temperatures higher than 400℃. This deterioration can be attributed to the onset of metallurgical reactions at the Ti-InGaP interface.

机译：实验表明，如果采用适当的接触技术，则对于Ti / Pt / Au和WSiN / Ti / Pt / Au金属化均可获得良好的肖特基二极管。然而，虽然WSiN / Ti / Pt / Au接触件在550℃时仍保持稳定，但Ti / Pt / Au接触件在高于400℃的温度下却失去了肖特基特性。这种劣化可归因于Ti-InGaP界面处的冶金反应的开始。

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来源
《Heterostructure epitaxy and devices(HEAD'97)》|1997年|293-296|共5页
会议地点 Smolenice Castle(SK);Smolenice Castle(SK)
作者
V.MALINA; K. ZDANSKY; K.VOGEL; P.RESSEL; B.PECZ;
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作者单位

Institute of Radio Engineering and Electronics, Academy of Sciences of the Czech Republic,Chaberskd 57, CZ-18251 Prague 8, Czech Republic;

Institute of Radio Engineering and Electronics, Academy of Sciences of the Czech Republic,Chaberskd 57, CZ-18251 Prague 8, Czech Republic;

Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik,Rudower Chaussee 5, D-12489 Berlin, Germany;

Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik,Rudower Chaussee 5, D-12489 Berlin, Germany;

Research Institute for Technical Physics,Ujpest 1, P.O.Box 76, H-1325 Budapest, Hungary;

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正文语种 eng
中图分类薄膜的生长、结构和外延;
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机译：Ti / Al / Pt / Au和Ti / Al / Ni / Au接触n型GaN中Ni和Pt的不同势垒效应的研究
2. Low Resistance, Thermally Stable Au/Pt/Ti/WSiN Ohmic Contacts on n↑(+)-InGaAs-GaAs Layer Systems [J] . E. NEBAUER, M. MAI, E. RICHTER Journal of Electronic Materials . 1998,第7a12期

机译：n↑（+）-InGaAs / n-GaAs层系统上的低电阻，热稳定的Au / Pt / Ti / WSiN欧姆接触
3. Low Resistance, Thermally Stable Au/Pt/Ti/WSiN Ohmic Contacts on n+-InGaAs-GaAs Layer Systems [J] . E. NEBAUER, M. MAI, E. RICHTER Journal of Electronic Materials . 1998,第12期

机译：n + -InGaAs / n-GaAs层系统上的低电阻，热稳定的Au / Pt / Ti / WSiN欧姆接触
4. Ti/Pt/Au AND WSiN/Ti/Pt/Au SCHOTTKY CONTACTS TO N-TYPE InGaP EPITAXIAL LAYERS [C] . NATO advanced research workshop on international heterostructure epitaxy and devices . 1998

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7. Thermal degradation mechanism of Ti/Pt/Au Schottky contact to n-type GaAs [O] . Jong-Lam Lee, Jae Kyoung Mun, Byung-Teak Lee 1997

机译：Ti / Pt / Au Schottky接触的热降解机理到N型GaAs
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Ti/Pt/Au AND WSiN/Ti/Pt/Au SCHOTTKY CONTACTS TO N-TYPE InGaP EPITAXIAL LAYERS

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