Ti/Pt/Au AND WSiN/Ti/Pt/Au SCHOTTKY CONTACTS TO N-TYPE InGaP EPITAXIAL LAYERS

机译：TI / PT / AU和WSIN / TI / PT / AU SCHOTTKY触点到N型INGAP外延层

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Experiments showed that provided a proper contact technology is applied, good Schottky diodes can be obtained both for the Ti/Pt/Au and WSiN/Ti /Pt/Au metallizations. However, while the WSiN/Ti/Pt/Au contacts are stable up to 550°C, the Ti/Pt/Au contacts lose their Schottky character at temperatures higher than 400°C. This deterioration can be attributed to the onset of metallurgical reactions at the Ti-InGaP interface.

机译：实验表明，提供了适当的接触技术，可以获得良好的肖特基二极管，用于Ti / Pt / Au和Wsin / Ti / Pt / Au金属化。然而，虽然WSIN / TI / PT / AU触点稳定达550℃，但Ti / Pt / Au触点在高于400°C的温度下丢失肖特基字符。这种劣化可归因于Ti-Ingap界面处的冶金反应的开始。

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《NATO advanced research workshop on international heterostructure epitaxy and devices》|1998年||共4页
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中图分类薄膜的生长、结构和外延;
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2. Low Resistance, Thermally Stable Au/Pt/Ti/WSiN Ohmic Contacts on n↑(+)-InGaAs-GaAs Layer Systems [J] . E. NEBAUER, M. MAI, E. RICHTER Journal of Electronic Materials . 1998,第7a12期

机译：n↑（+）-InGaAs / n-GaAs层系统上的低电阻，热稳定的Au / Pt / Ti / WSiN欧姆接触
3. Low Resistance, Thermally Stable Au/Pt/Ti/WSiN Ohmic Contacts on n+-InGaAs-GaAs Layer Systems [J] . E. NEBAUER, M. MAI, E. RICHTER Journal of Electronic Materials . 1998,第12期

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4. Ti/Pt/Au AND WSiN/Ti/Pt/Au SCHOTTKY CONTACTS TO N-TYPE InGaP EPITAXIAL LAYERS [C] . NATO advanced research workshop on international heterostructure epitaxy and devices . 1998

机译：TI / PT / AU和WSIN / TI / PT / AU SCHOTTKY触点到N型INGAP外延层
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7. Thermal degradation mechanism of Ti/Pt/Au Schottky contact to n-type GaAs [O] . Jong-Lam Lee, Jae Kyoung Mun, Byung-Teak Lee 1997

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Ti/Pt/Au AND WSiN/Ti/Pt/Au SCHOTTKY CONTACTS TO N-TYPE InGaP EPITAXIAL LAYERS

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