AU, CO, PD, PT, RU, RH, IR, TA, CR, MN, MO, TC, W, RE, FE, SC, TI, SN, GE, SB, AL, ITO, ZNO

摘要

Relates to a gallium nitride compound semiconductor is started with respect to the particular electrode and a p- type Group III-V compound semiconductor to apply them. p- electrode is a Group III-V the first layer by a zinc-based material comprises a solute element in the zinc to be formed in the nitride compound semiconductor layer according to the present invention; And to be stacked on top the first layer {Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb and from the group consisting of Al, ITO, ZnO} and a second layer by at least one of the materials selected. P- zinc electrode appears to exhibit excellent electrical, optical and thermal properties.