Point defect characterization of Zn- and Cd-based semiconductors using positron lifetime spectroscopy

摘要

A study of point defects in II-VI compound semiconductors was undertaken and has revealed that open volume defects are present in a wide variety of these samples. Zn-based binary compounds contain primarily neutral divacancy defects in concentrations in the mid-10~16 cm~-3. CdTe samples contain neutral monovacancy sized defect complexes in the high-10~16 cm~-3 range. When a small fraction of Zn or Se is alloyed into DeTe, the defect profile changes dramatically to one dominated by divacancy sized defects at roughly half the original concentration. direct c 1999 Elsevier Science B.V. All rights reserved.